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IMAGE SENSOR
NMOS linear image sensor
S3901/S3904 series
Current output, high UV sensitivity, excellent linearity, low power consumption
NMOS linear image sensors are self-scanning photodiode arrays designed specifically as detectors for multichannel spectroscopy. The scanning circuit is made up of N-channel MOS transistors, operates at low power consumption and is easy to handle. Each photodiode has a large active area, high UV sensitivity yet very low noise, delivering a high S/N even at low light levels. NMOS linear image sensors also offer excellent output linearity and wide dynamic range. The photodiodes of S3901 series have a height of 2.5 mm and are arrayed in a row at a spacing of 50 m. The photodiodes of S3904 series also have a height of 2.5 mm but are arrayed at a spacing of 25 m. The photodiodes are available in 3 different pixel quantities for each series: 128 (S3901-128Q), 256 (S3901-256Q, S3904-256Q), 512 (S3901-512Q, S3904-512Q) and 1024 (S3904-1024Q). Quartz glass is the standard window material.
Features
Pixel pitch: 50 m (S3901 series) 25 m (S3904 series) Pixel height: 2.5 mm l High UV sensitivity with good stability l Low dark current and high saturation charge allow a long integration time and a wide dynamic range at room temperature l Excellent output linearity and sensitivity spatial uniformity l Lower power consumption: 1 mW Max. l Start pulse and clock pulses are CMOS logic compatible
Applications
l Wide active area
l Multichannel spectrophotometry l Image readout system
Figure 1 Equivalent circuit
START CLOCK CLOCK st 1 2 DEGITAL SHIFT RESISTER (MOS SHIFT RESISTER) END OF SCAN
Figure 2 Active area structure
ACTIVE PHOTODIODE
ACTIVE VIDEO
Vss SATURATION CONTROL GATE SATURATION CONTROL DRAIN DUMMY DIODE
1.0 m 400 m
b a
1.0 m
DUMMY VIDEO
OXIDATION SILICON
KMPDC0020EA
N TYPE SILICON P TYPE SILICON
S3901 SERIES: a=50 m, b=45 m S3904 SERIES: a=25 m, b=20 m
KMPDA0059EA
s Absolute maximum ratings
Parameter Input pulse (1, 2, st) voltage Power consumption *1 Operating temperature *2 Storage temperature *1: V=5.0 V *2: No dew
Symbol V P Topr Tstg
Value 15 1 -40 to +65 -40 to +85
2.5 mm
Unit V mW C C
NMOS linear image sensor
s Shape specifications
Parameter S3901-128Q S3901-256Q Number of pixels 128 256 Package length 31.75 Number of pins 22 Window material *3 Quartz Weight 3.0 *3: Fiber optic plate is available. S3901-512Q 512 40.6 3.5
S3901/S3904 series
Unit mm g
S3904-256Q S3904-512Q S3904-1024Q 256 512 1024 31.75 40.6 22 Quartz 3.0 3.5
s Specifications (Ta=25 C)
Parameter Symbol Min. -
Pixel pitch Pixel height Spectral response range 200 to 1000 (10 % of peak) Peak sensitivity wavelength 600 p Photodiode dark current *4 ID 0.2 Photodiode capacitance *4 Cph 20 Saturation exposure *4, *5 Esat 180 Saturation output charge *4 Qsat 50 Photo response non-uniformity *6 PRNU *4: Vb=2.0 V, V=5.0 V *5: 2856 K, tungsten lamp *6: 50 % of saturation, excluding the start pixel and last pixel
S3901 series Typ. Max. 50 2.5 0.6 3
Min. -
S3904 series Typ. Max. 25 2.5 200 to 1000 600 0.1 10 180 25 0.3 3
Unit m mm nm nm pA pF mlx * s pC %
s Electrical characteristics (Ta=25 C)
Parameter Clock pulse (1, 2) voltage Symbol Condition High V1, V2 (H) Low V1, V2 (L) High Vs (H) Start pulse (st) voltage Low Vs (L) Video bias voltage *7 Vb Saturation control gate voltage Vscg Saturation control drain voltage Vscd tr1, tr2 8 Clock pulse (1, 2) rise / fall time * tf1, tf2 Clock pulse (1, 2) pulse width tpw1, tpw2 Start pulse (st) rise / fall time trs, tfs Start pulse (st) pulse width tpws Start pulse (st) and clock pulse tov (2) overlap 8 Clock pulse space * X1, X2 Data rate *9 f Video delay time Clock pulse (1, 2) line capacitance Saturation control gate (Vscg) line capacitance Video line capacitance tvd C Cscg CV Min. 4.5 0 4.5 0 1.5 200 200 200
S3901 series Typ. Max. 5 10 0.4 10 V1 0.4 V - 3.0 V - 2.5 0 Vb 20 20 -
Min. 4.5 0 4.5 0 1.5 200 200 200
S3904 series Typ. Max. 5 10 0.4 10 V1 0.4 V - 3.0 V - 2.5 0 Vb 20 20 100 (-256 Q) 150 (-512 Q) 200 (-1024 Q) 27 (-256 Q) 50 (-512 Q) 100 (-1024 Q) 14 (-256 Q) 24 (-512 Q) 45 (-1024 Q) 10 (-256 Q) 16 (-512 Q) 30 (-1024 Q) 2000 -
Unit V V V V V V V ns ns ns ns ns ns kHz ns ns ns pF pF pF pF pF pF pF pF pF
50 % of saturation *9, *10 5 V bias 5 V bias 2 V bias
trf - 20 0.1 -
2000 80 (-128 Q) 120 (-256 Q) 160 (-512 Q) 21 (-128 Q) 36 (-256 Q) 67 (-512 Q) 12 (-128 Q) 20 (-256 Q) 35 (-512 Q) 7 (-128 Q) 11 (-256 Q) 20 (-512 Q)
trf - 20 0.1 -
*7: V is input pulse voltage (refer to figure 8). *8: trf is the clock pulse rise or fall time. A clock pulse space of rise time/fall time - 20 ns (nanoseconds) or more should be input if the clock pulse rise or fall time is longer than 20 ns (refer to figure 7). *9: Vb=2.0 V, V=5.0 V *10: Measured with C7883 driver circuit.
NMOS linear image sensor
Figure 3 Dimensional outlines (unit: mm) S3901-128Q, S3904-256Q
ACTIVE AREA 6.4 x 2.5
ACTIVE AREA 12.8 x 2.5
S3901/S3904 series
S3901-256Q, S3904-512Q
5.4 0.2
3.2 0.3
6.4 0.3
10.4
5.4 0.2 5.0 0.2 10.4
5.0 0.2
31.75
PHOTOSENSITIVE SURFACE
1.3 0.2 *
31.75
PHOTOSENSITIVE SURFACE
0.51 2.54
0.25
0.51 2.54 0.25
25.4
10.16
25.4 10.16 * Optical distance from the outer surface of the quartz window to the chip surface
KMPDA0061EA
* Optical distance from the outer surface of the quartz window to the chip surface
KMPDA0060EA
S3901-512Q, S3904-1024Q
Figure 4 Pin connection
2 1 2 3 4 5 6 7 8 9 10 11 22 21 20 19 18 17 16 15 14 13 12 NC NC NC NC NC NC NC NC NC NC END OF SCAN
5.4 0.2
ACTIVE AREA 25.6 x 2.5
12.8 0.3
1 st Vss
10.4
Vscg NC
5.0 0.2
40.6
PHOTOSENSITIVE SURFACE
Vscd Vss ACTIVE VIDEO
1.3 0.2 *
DUMMY VIDEO Vsub
3.0
Vss, Vsub and NC should be grounded.
0.51 2.54 25.4 10.16
0.25
* Optical distance from the outer surface of the quartz window to the chip surface
KMPDA0062EA
1.3 0.2 *
KMPDC0056EA
3.0
3.0
NMOS linear image sensor
Terminal 1, 2 st Vss Vscg Vscd Input or output Input (CMOS logic compatible) Input (CMOS logic compatible) Input Input
S3901/S3904 series
Active video
Output
Dummy video Vsub End of scan NC
Output Output (CMOS logic compatible) -
Description Pulses for operating the MOS shift register. The video data rate is equal to the clock pulse frequency since the video output signal is obtained synchronously with the rise of 2 pulse. Pulse for starting the MOS shift register operation. The time interval between start pulses is equal to the signal accumulation time. Connected to the anode of each photodiode. This should be grounded. Used for restricting blooming. This should be grounded. Used for restricting blooming. This should be biased at a voltage equal to the video bias voltage. Video output signal. Connects to photodiode cathodes when the address is on. A positive voltage should be applied to the video line in order to use photodiodes with a reverse voltage. When the amplitude of 1 and 2 is 5 V, a video bias voltage of 2 V is recommended. This has the same structure as the active video, but is not connected to photodiodes, so only spike noise is output. This should be biased at a voltage equal to the active video or left as an open-circuit when not needed. Connected to the silicon substrate. This should be grounded. This should be pulled up at 5 V by using a 10 k resistor. This is a negative going pulse that appears synchronously with the 2 timing right after the last photodiode is addressed. Should be grounded.
Figure 5 Spectral response (typical example)
0.3 (Ta=25 C)
Figure 6 Output charge vs. exposure
102 (Typ. Vb=2 V, V =5 V, light source: 2856 K)
PHOTO SENSITIVITY (A/W)
101
OUTPUT CHARGE (pC)
SATURATION CHARGE S3901 SERIES
0.2
100 S3904 SERIES 10
-1
0.1
SATURATION EXPOSURE 10-2
0 200
400
600
800
1000
1200
10
-3
10-5
10-4
10-3
10-2
10-1
100
WAVELENGTH (nm)
KMPDB0149EA
EXPOSURE (lx * s)
KMPDB0042EB
s Construction of image sensor
The NMOS image sensor consists of a scanning circuit made up of MOS transistors, a photodiode array, and a switching transistor array that addresses each photodiode, all integrated onto a monolithic silicon chip. Figure 1 shows the circuit of a NMOS linear image sensor. The MOS scanning circuit operates at low power consumption and generates a scanning pulse train by using a start pulse and 2-phase clock pulses in order to turn on each address sequentially. Each address switch is comprised of an NMOS transistor using the photodiode as the source, the video line as the drain and the scanning pulse input section as the gate. The photodiode array operates in charge integration mode so that the output is proportional to the amount of light exposure (light intensity x integration time). Each cell consists of an active photodiode and a dummy photodiode, which are respectively connected to the active video line and the dummy video line via a switching transistor. Each of the active photodiodes is also connected to the saturation control drain via the saturation control transistor, so that the photodiode blooming can be suppressed by grounding the saturation control gate. Applying a pulse signal to the saturation control gate triggers all reset. (See "Auxiliary functions".) Figure 2 shows the schematic diagram of the photodiode active area. This active area has a PN junction consisting of an N-type diffusion layer formed on a P-type silicon substrate. A signal charge generated by light input accumulates as a capacitive charge in this PN junction. The N-type diffusion layer provides high UV sensitivity but low dark current.
NMOS linear image sensor
s Driver circuit
S3901/S3904 series do not require any DC voltage supply for operation. However, the Vss, Vsub and all NC terminals must be grounded. A start pulse st and 2-phase clock pulses 1, 2 are needed to drive the shift register. These start and clock pulses are positive going pulses and CMOS logic compatible. The 2-phase clock pulses 1, 2 can be either completely separated or complementary. However, both pulses must not be "High" at the same time. A clock pulse space (X1 and X2 in Figure 7) of a "rise time/fall time - 20" ns or more should be input if the rise and fall times of 1, 2 are longer than 20 ns. The 1 and 2 clock pulses must be held at "High" at least 200 ns. Since the photodiode signal is obtained at the rise of each 2 pulse, the clock pulse frequency will equal the video data rate.
S3901/S3904 series
The amplitude of start pulse st is the same as the 1 and 2 pulses. The shift register starts the scanning at the "High" level of st, so the start pulse interval determines the length of signal accumulation time. The st pulse must be held "High" at least 200 ns and overlap with 2 at least for 200 ns. To operate the shift register correctly, 2 must change from the "High" level to the "Low" level only once during "High" level of st. The timing chart for each pulse is shown in Figure 7.
s End of scan
The end of scan (EOS) signal appears in synchronization with the 2 timing right after the last photodiode is addressed, and the EOS terminal should be pulled up at 5 V using a 10 k resistor.
Figure 7 Timing chart for driver circuit
st 1 2 V s (H) V s (L) V V V V 1 (H) 1 (L) 2 (H) 2 (L) tpw s tpw 1
Figure 8 Video bias voltage margin
10
tvd ACTIVE VIDEO OUTPUT
VIDEO BIAS VOLTAGE (V)
tpw 2
8
6
END OF SCAN
RE
4
CO
E MM
ND
ED
BIA
S
MA
X.
tr s st
tf s
VIDEO BIAS RANGE 2 MIN. 0 4 5 6 7 8 9 10
tr 1
tf 1
1 X1 2 t ov tr 2 X2
tf 2
CLOCK PULSE AMPLITUDE (V)
s Signal readout circuit
There are two methods for reading out the signal from an NMOS linear image sensor. One is a current detection method using the load resistance and the other is a current integration method using a charge amplifier. In either readout method, a positive bias must be applied to the video line because photodiode anodes of NMOS linear image sensors are set at 0 V (Vss). Figure 8 shows a typical video bias voltage margin. As the clock pulse amplitude is higher, the video bias voltage can be set larger so the saturation charge can be increased. The rise and fall times of the video output waveform can be shortened if the video bias voltage is reduced while the clock pulse amplitude is still higher. When the amplitude of 1, 2 and st is 5 V, setting the video bias voltage at 2 V is recommended. To obtain good linearity, using the current integration method is advised. In this method, the integration capacitance is reset to the reference voltage level immediately before each photodiode is addressed and the signal charge is then stored as an integration capacitive charge when the address switch turns on. Figures 9 and 10 show a typical current integration circuit and its pulse timing chart. To ensure stable output, the rise of a reset pulse must be delayed at least 50 ns from the fall of 2.
KMPDC0022EA
KMPDB0043EA
Hamamatsu provides the following driver circuits and related products (sold separately).
Product name Type No. C7883 C7883G Driver circuit C7884 C7884G C7884-01 C7884G-01 Pulse C8225-01 generator Cable A8226 Content High-speed driver circuit C7883 + C8225-01 Precision driver circuit C7884 + C8225-01 High precision driver circuit C7884-01 + C8225-01 C7883, C7884 series C7883 to C7885 series Feature High-speed operation Single power supply (+15 V) operation Compact Low noise Good output linearity Boxcar waveform output Ultra-low noise Good output linearity Boxcar waveform output
BNC, length 1 m
NMOS linear image sensor
Figure 9 Readout circuit example and timing chart
+5 V
S3901/S3904 series
50 ns MIN.
10 k st 1 2 st 1 2 Vscg Vss Vsub NC ACTIVE VIDEO Vscd + - EOS DUMMY VIDEO OPEN EOS
st
RESET
1, Reset 2
10 pF
KMPDC0024EA
+
OP-AMP (JFET INPUT)
+2 V
KMPDC0023EA
Output voltage Vout is Output charge [C] Vout [V] = 10 x 10-12 [F] shown in.
s Anti-blooming function
If the incident light intensity is higher than the saturation charge level, even partially, a signal charge in excess of the saturation charge cannot accumulate in the photodiode. This excessive charge flows out into the video line degrading the signal purity. To avoid this problem and maintain the signal purity, applying the same voltage as the video bias voltage to the saturation control drain and grounding the saturation control gate are effective. If the incident light intensity is extremely high, a positive bias should be applied to the saturation control gate. The larger the voltage applied to the saturation control gate, the higher the function for suppressing the excessive saturation charge will be. However, this voltage also lowers the amount of saturation charge, so an optimum bias voltage should be selected.
s Auxiliary functions
1) All reset In normal operation, the accumulated charge in each photodiode is reset when the signal is read out. Besides this method that uses the readout line, S3901/S3904 series can reset the photodiode charge by applying a pulse to the saturation control gate. The amplitude of this pulse should be equal to the 1, 2 and st pulses and the pulse width should be longer than 5 s. When the saturation control gate is set at the "High" level, all photodiodes are reset to the saturation control drain potential (equal to video bias). Conversely, when the saturation control gate is set at the "Low" level (0 V), the signal charge accumulates in each photodiode without being reset. 2) Dummy video S3901/S3904 series have a dummy video line to eliminate spike noise contained in the video output waveform. Video signal with lower spike noise can be obtained by differential amplification applied between the active video line and dummy video line outputs. When not needed, leave this unconnected.
s Handling precautions
1) Electrostatic countermeasures NMOS linear image sensors are designed to resist static electrical charges. However, take sufficient cautions and countermeasures to prevent damage from static charges when handling the sensors. 2) Window If dust or grime sticks to the surface of the light input window, it appears as a black blemish or smear on the image. Before using the image sensor, the window surface should be cleaned. Wipe off the window surface with a soft cloth, cleaning paper or cotton swab slightly moistened with organic solvent such as alcohol, and then lightly blow away with compressed air. Do not rub the window with dry cloth or cotton swab as this may generate static electricity.
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. (c)2001 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvagen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Cat. No. KMPD1036E01 Mar. 2001 DN

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